![]() ![]() Applied Thermal Engineering, 100, 155–169.īryant, A. Developing a simple analytical thermal model for discrete semiconductor in operating condition. Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature. Emerging Science Journal, 2(1), 11–19.īelmehdi, Y., Azzopardi, S., Deletage, J.-Y., & Woirgard, E. Increasing the thermal efficiency of double tube heat exchangers by using nano hybrid. 3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs. Experimental investigations for thermal mutual evaluation in multi-chip modules. Microelectronics International, 24(3), 46–54.Īyadi, M., Bouguezzi, S., Ghariani, M., & Neji, R. ![]() Thermal modeling of semiconductor devices in power modules. PNP base-transmitter junction threshold (V) T aĪmmous, K., Abid, S., & Ammous, A. The achieved results show that our model is suitable for full electrothermal simulations of power electronic circuits. ![]() The transient thermal responses were demonstrated for the single pulse and repeat modes. They are more capable of predicting the main circuit parameters needed for power electronic design. The comparison shows that these models are simple, tunable with the electric circuit software simulator. The IGBT switching performance was investigated under influence of different circuit elements (such as stray inductance, gate resistance and temperature) in order to study and estimate the on-state and switching losses pre-requisite for the design of various converter and inverter topologies. The IGBT model was implemented in the PSpice circuit simulation platform using PSpice standard components and analog behavior modeling (ABM) blocks. The model was confirmed through a comparison with other models having close characteristics for different circuits (DC–DC converter, turn-on and turn-off) and different temperatures. The suggested model is able to address the electrical and thermal effects. The main local physical effects were taken into consideration. In this paper, an improved electrothermal model of power IGBT was developed. ![]()
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